Solid state recrystallization of semiconductor surfaces

Subsurface damage resultant from chemomechanical polishing of compound semiconductor wafers continues to be a limitation in the use of such wafers for epitaxial film growth. We have investigated methods for the creation of highly oriented, crystalline structure at surfaces containing minimal amounts of lattice disorder. Chemomechanical polishing was first used to produce surfaces with atomic scale roughness and submicrometer wafer flatness. In a subsequent processing step laser heating was used to drive solid state recrystallization of the surface. We have found that single crystallinity can be recovered at the surface with no measurable change occurring in the surface topography.

Funding provided by:

NSF and OCAST

Collaborators:

L. DeLuca, Politecnico di Milano and G. Vitali, Università degli Studi di Roma

Relevant publication:

Vitali, G., Pizzuto, C., Zollo, G., Lucca, D.A. and De Luca, L., "Low-Power Pulsed-Laser Annealing of the Damaged Surface Layer of Chemomechanically Polished CdS", Japanese Journal of Applied Physics, 35, Part 2, No. 12A, (1996) L1558-L1561.